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Four scientists from Freiburg have succeeded for the first time to simulate the localized growth of silicon crystals using shear-induced amorphization and recrystallization. In the future, experts could use this concept to tailor crystalline silicon structures for nanotechnology applications, such as nanoelectronics. “Triboepitaxy”, the fundamental idea that could make this possible, is presented by the team in the journal “Physical Review Letters”.more info